Everspin Technologies, Inc., the world’s leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced an amendment of its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES (GF ), the world’s leading specialty foundry. Everspin and GF have been partners on 40 nm, 28 nm, and 22 nm STT-MRAM development and manufacturing processes and have now updated their agreement to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin is in production of discrete STT-MRAM solutions on 40 and 28 nm, including its award winning 1 Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.
Everspin拥有超过650项与MRAM在其知识产权组合中有关的专利和应用程序，并且是唯一一家在离散MRAM生产中的记忆制造商。虽然对离散MRAM的预测变化，托马斯·卡夫林博士，数字存储分析师博士在福布斯文章中提到了他的2019年新兴的记忆升高报告预测，在2029年，销售额达到45亿美元的销售额超过125米迄今为止离散MRAM产品的单位，拥有超过1000名客户。GF在EMRAM开发中引领，旨在取代嵌入式闪存，特别是在微控制器应用和无线连接的IOT中。EMRAM为EFLASH提供卓越的性能，特别是写入速度和较低功率，并在嵌入应用所需的较高温度下支持长期数据保留。由于其数据持久性，较低的功率和尺寸，EMRAM非常适合取代ESRAM，具有类似的性能和耐久性能力。
“我们与everspin的合作使我们能够集体领导STT-MRAM开发和制造业的行业，”GlobalFoundries技术，工程和质量高级副总裁Gregg Bartlett。“我们非常兴奋地扩展我们的联合发展协议，将MRAM的分化带到我们的12 NM FinFET平台。”
Everspin’s STT-MRAM and Toggle MRAM devices allow enterprise infrastructure, data center, industrial, IoT and a host of other application providers to increase the reliability and performance of systems where high-performance data persistence is critical. This is achieved by delivering protection against power loss without the use of supercapacitors or batteries, and in many applications providing the performance and endurance required for code and data storage in a single persistent device.
“Due to our industry leading partnership with GLOBALFOUNDRIES, we were first with the commercialization of Spin-transfer Torque MRAM,” said Kevin Conley, President and CEO, Everspin. “Further scaling to GF’s 12 nm FinFET platform will continue to solidify not only our mutual technology leadership but will provide the next step for STT-MRAM as the future of memory technology.”
